N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 4.2A continuous drain current. Offers a low 1.6 Ohm typical drain-source on-resistance and 70W power dissipation. Designed for surface mounting in a DPAK package, this component boasts fast switching speeds with a 12ns turn-on delay and 21ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD5N62K3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
4.2A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
1.6R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
1.6R
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
680pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
1.6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
40ns
Turn-On Delay Time
12ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD5N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STD5N62K3 to view detailed technical specifications.
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