N-channel SuperMESH™ Power MOSFET featuring 400V drain-source breakdown voltage and 3A continuous drain current. This through-hole component offers a low 1.8 Ohm maximum drain-source on-resistance and 45W power dissipation. Designed for efficient switching, it exhibits typical fall time of 11ns and turn-off delay of 22.5ns. Packaged in TO-251-3 (IPAK), this RoHS compliant device operates from -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD5NK40Z-1 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
1.8R
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
Input Capacitance
305pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
1.8R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
22.5ns
Turn-On Delay Time
9.2ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD5NK40Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD5NK40Z-1 to view detailed technical specifications.
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