N-channel Power MOSFET featuring 525V drain-source breakdown voltage and 5A continuous drain current. Offers a typical 1 Ohm drain-source on-resistance, with a maximum of 1.2 Ohms. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 70W. Key switching characteristics include a 10ns turn-on delay and an 18ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD6N52K3 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 525V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 525V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD6N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STD6N52K3 to view detailed technical specifications.
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