N-CHANNEL MOSFET, 500V Drain to Source Breakdown Voltage, 5.6A Continuous Drain Current, 1.2 Ohm Max Drain-Source On Resistance. Features Zener protection and SuperMESH™ technology. Packaged in a DPAK surface mount case, this component offers a 90W power dissipation and operates between -55°C and 150°C. Includes 12ns turn-on delay and 23ns fall time.
PackageDPAK
Current Rating5.6A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STD6NK50ZT4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
5.6A
Current Rating
5.6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
1.2R
Fall Time
23ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
690pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Nominal Vgs
3.75V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
31ns
Turn-On Delay Time
12ns
DC Rated Voltage
500V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD6NK50ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD6NK50ZT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
