The STD6NM60N-1 is a high-power N-channel MOSFET from Stmicroelectronics, featuring a maximum drain-to-source breakdown voltage of 600V and a continuous drain current of 4.6A. It has a maximum power dissipation of 45W and is packaged in a TO-251-3 case, suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD6NM60N-1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 920mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 420pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Rds On Max | 920mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD6NM60N-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD6NM60N-1 to view detailed technical specifications.
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