N-channel power MOSFET featuring 100V drain-source breakdown voltage and 60A continuous drain current. Offers low on-resistance with a maximum of 19.5mR at 10Vgs. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 125W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 30ns and fall time of 20ns.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STD70N10F4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
19.5mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.8nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
19.5mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™
Turn-Off Delay Time
65ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD70N10F4 Datasheet
Download the complete datasheet for Stmicroelectronics STD70N10F4 to view detailed technical specifications.
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