Automotive N-channel Power MOSFET, 600V Drain-Source Voltage, 5A Continuous Drain Current. Features enhancement mode operation, MDmesh process technology, and a maximum Gate-Source Voltage of ±25V. Packaged in a 3-pin DPAK (TO-252AA) with gull-wing leads for surface mounting, offering a maximum Drain-Source On-Resistance of 900mΩ at 10V. Maximum power dissipation is 45W, with an operating temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STD7ANM60N technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.4(Max)
Seated Plane Height (mm)
2.63(Max)
Pin Pitch (mm)
2.3(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
5A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
900@10VmOhm
Typical Gate Charge @ Vgs
14@10VnC
Typical Gate Charge @ 10V
14nC
Typical Input Capacitance @ Vds
363@50VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STD7ANM60N Datasheet
Download the complete datasheet for Stmicroelectronics STD7ANM60N to view detailed technical specifications.
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