N-channel Power MOSFET featuring 525V drain-source voltage and 6A continuous drain current. This single-element transistor utilizes SuperFREDmesh 3 process technology and is housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads. Key specifications include a maximum gate-source voltage of ±30V, 1150mOhm drain-source resistance at 10V, and typical gate charge of 33nC. The Deca Watt Package has a maximum length of 6.6mm, width of 6.2mm, and height of 2.4mm, with a seated plane height of 2.63mm and pin pitch of 2.3mm.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STD7N52DK3 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.4(Max)
Seated Plane Height (mm)
2.63(Max)
Pin Pitch (mm)
2.3(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SuperFREDmesh 3
Maximum Drain Source Voltage
525V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
6A
Maximum Drain Source Resistance
1150@10VmOhm
Typical Gate Charge @ Vgs
33@10VnC
Typical Gate Charge @ 10V
33nC
Typical Input Capacitance @ Vds
870@50VpF
Maximum Power Dissipation
90000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STD7N52DK3 Datasheet
Download the complete datasheet for Stmicroelectronics STD7N52DK3 to view detailed technical specifications.
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