N-channel Power MOSFET featuring 525V drain-source breakdown voltage and 6A continuous drain current. Offers a low 850mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 150°C and boasts 90W power dissipation. Key switching characteristics include a 13ns turn-on delay and 19ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STD7N52K3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
525V
Drain-source On Resistance-Max
850mR
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
737pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
980mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
36ns
Turn-On Delay Time
13ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD7N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STD7N52K3 to view detailed technical specifications.
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