N-CHANNEL Power MOSFET, DPAK package, featuring 500V Drain to Source Breakdown Voltage and 5A Continuous Drain Current. Offers a low 780mR Drain to Source On Resistance at a nominal 3V Gate to Source Voltage. Designed for surface mounting with a maximum power dissipation of 45W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with a 9ns fall time and 40ns turn-off delay. RoHS compliant.
Stmicroelectronics STD7NM50N technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 780mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 780mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Rds On Max | 780mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 40ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD7NM50N to view detailed technical specifications.
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