N-CHANNEL Power MOSFET, DPAK package, featuring 500V Drain to Source Breakdown Voltage and 5A Continuous Drain Current. Offers a low 780mR Drain to Source On Resistance at a nominal 3V Gate to Source Voltage. Designed for surface mounting with a maximum power dissipation of 45W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with a 9ns fall time and 40ns turn-off delay. RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD7NM50N technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
780mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
780mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
400pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Surface Mount
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Rds On Max
780mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
40ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD7NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STD7NM50N to view detailed technical specifications.
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