N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 6.5A continuous drain current. This surface-mount device offers a low 1.05 Ohm maximum drain-source on-resistance and a 90W maximum power dissipation. Designed with a DPAK package, it includes fast switching characteristics with typical turn-on delay of 20ns and fall time of 10ns. Operating temperature range spans from -55°C to 150°C, with RoHS compliance.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STD7NM80 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
6.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.05R
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
1.05R
Dual Supply Voltage
800V
Fall Time
10ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
620pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
1.05R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
35ns
Turn-On Delay Time
20ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD7NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STD7NM80 to view detailed technical specifications.
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