N-channel power MOSFET featuring 800V drain-source breakdown voltage and 6.5A continuous drain current. Offers 1.05 Ohm drain-source resistance (Rds On Max) and 90W maximum power dissipation. Designed for through-hole and surface mount applications with a TO-251 package. Key switching characteristics include a 20ns turn-on delay and 10ns fall time. Operates within a -55°C to 150°C temperature range and is RoHS compliant.
PackageTO-251
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STD7NM80-1 technical specifications.
General
Package/Case
TO-251
Continuous Drain Current (ID)
6.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.05R
Drain to Source Voltage (Vdss)
800V
Fall Time
10ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
Input Capacitance
620pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole, Surface Mount
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
1.05R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
35ns
Turn-On Delay Time
20ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD7NM80-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD7NM80-1 to view detailed technical specifications.
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