NPN Bipolar Junction Transistor (BJT) for power applications. Features a 400V collector-emitter voltage and 4A continuous collector current. This dual dual collector transistor offers 2 elements per chip and a maximum power dissipation of 3000mW. Housed in an 8-pin PDIP plastic through-hole package with a 2.54mm pin pitch, it operates from -65°C to 150°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STD840DN40 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | PDIP |
| Package Description | Plastic Dual In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 9.3(Max) |
| Package Width (mm) | 6.45(Max) |
| Package Height (mm) | 3.5(Max) |
| Seated Plane Height (mm) | 4.8(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Dual Dual Collector |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 700V |
| Maximum Emitter Base Voltage | 9V |
| Maximum Collector-Emitter Voltage | 400V |
| Maximum DC Collector Current | 4A |
| Maximum Power Dissipation | 3000mW |
| Minimum DC Current Gain | 8@2A@5V|10@10mA@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STD840DN40 Datasheet
Download the complete datasheet for Stmicroelectronics STD840DN40 to view detailed technical specifications.
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