
Automotive-grade N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers a low 0.0045 Ohm typical drain-source on-resistance and 5mR maximum Rds On. Designed for surface mounting in a DPAK package, this component operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 70W. Key switching characteristics include a 6ns turn-on delay and 10.8ns fall time.
Stmicroelectronics STD86N3LH5 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5MR |
| Fall Time | 10.8ns |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 1.85nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Turn-Off Delay Time | 23.6ns |
| Turn-On Delay Time | 6ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD86N3LH5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
