PNP Bipolar Junction Transistor (BJT) for high-current, low-voltage applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 5A. Operates within a temperature range of -65°C to 150°C with a 15W power dissipation. Packaged in a DPAK surface-mount case, this RoHS compliant component offers a low saturation voltage of 1.5V.
PackageDPAK
MountingSurface Mount
PolarityPNP
Power15W
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Technical Specifications
Stmicroelectronics STD888T4 technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.2V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 2.4mm |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD888T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD888T4 to view detailed technical specifications.
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