N-channel power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. Offers a low 700mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component boasts a 70W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 9ns turn-on delay and 22ns fall time.
Stmicroelectronics STD8NM60ND technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 590mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 700mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 700mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD8NM60ND to view detailed technical specifications.
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