N-Channel Power MOSFET for surface mount applications. Features a 24V drain-to-source breakdown voltage and a continuous drain current of 60A. Offers a low 6mΩ Rds(on) and 7mΩ drain-to-source resistance. Designed with a DPAK package, this component boasts a maximum power dissipation of 95W and operates within a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 18ns. RoHS compliant and lead-free.
Stmicroelectronics STD90NH02LT4 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 24V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.85nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 95W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 95W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 24V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD90NH02LT4 to view detailed technical specifications.
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