N-channel STripFET™ III power MOSFET featuring 40V drain-source breakdown voltage and 5mΩ maximum drain-source on-resistance. This surface-mount device offers a continuous drain current of 80A and a maximum power dissipation of 110W. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-252-3 (DPAK) for efficient thermal management. Key switching characteristics include a 7.5ns turn-on delay and 45ns turn-off delay.
Stmicroelectronics STD95N4LF3 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 6MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 7.5ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD95N4LF3 to view detailed technical specifications.
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