N-channel power MOSFET featuring 500V drain-source breakdown voltage and 5A continuous drain current. Offers a low 560mΩ maximum drain-source on-resistance at a 10V gate-source voltage. This surface-mount device, packaged in DPAK, boasts a 45W maximum power dissipation and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and 19ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD9NM50N technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 560mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 560mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 570pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 790mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD9NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STD9NM50N to view detailed technical specifications.
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