Stmicroelectronics
STD9NM50N-1
7.5A, 500V, 0.56ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD9NM50N-1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 560mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 570pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 560mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD9NM50N-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD9NM50N-1 to view detailed technical specifications.
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