
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. Offers a low 745mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component boasts a 70W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 26.7ns fall time and 28ns turn-on delay.
Stmicroelectronics STD9NM60N technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 745mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 745mR |
| Fall Time | 26.7ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.4mm |
| Input Capacitance | 452pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 745mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 52.5ns |
| Turn-On Delay Time | 28ns |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD9NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
