N-channel power MOSFET featuring 200V drain-source breakdown voltage and 10mΩ typical drain-source on-resistance. This device offers a continuous drain current of 140A and a maximum power dissipation of 500W. Designed for high-efficiency switching, it includes a fast diode and operates within a temperature range of -55°C to 150°C. The MOSFET is presented in an ISOTOP package suitable for chassis mounting.
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power500W
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Technical Specifications
Stmicroelectronics STE140NF20D technical specifications.
General
| Continuous Drain Current (ID) | 140A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 10mR |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 11.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount, Screw |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 283ns |
| Turn-On Delay Time | 232ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STE140NF20D Datasheet
Download the complete datasheet for Stmicroelectronics STE140NF20D to view detailed technical specifications.
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