N-channel power MOSFET featuring 100V drain-source breakdown voltage and a maximum continuous drain current of 220A. Offers a low 5.5mΩ drain-source on-resistance and 500W power dissipation. Designed for chassis mounting with a screw terminal, this component operates within a temperature range of -55°C to 150°C. Includes a 3V threshold voltage and is RoHS compliant.
Stmicroelectronics STE250NS10 technical specifications.
| Continuous Drain Current (ID) | 220A |
| Current Rating | 220A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 5.5mR |
| Fall Time | 300ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.1mm |
| Input Capacitance | 31nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 1100ns |
| Turn-On Delay Time | 110ns |
| DC Rated Voltage | 100V |
| Width | 25.5mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STE250NS10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.