
N-channel power MOSFET featuring 900V drain-source breakdown voltage and 28A continuous drain current. Offers a low 260mΩ maximum drain-source on-resistance. Designed for chassis mounting with a maximum power dissipation of 500W. Operates across a wide temperature range from -65°C to 150°C. RoHS compliant and lead-free.
Stmicroelectronics STE30NK90Z technical specifications.
| Continuous Drain Current (ID) | 28A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 260mR |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.1mm |
| Input Capacitance | 12nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount, Screw |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 260mR |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 250ns |
| Turn-On Delay Time | 67ns |
| DC Rated Voltage | 900V |
| Width | 25.5mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STE30NK90Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.