
N-channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 45A continuous drain current. This device offers a low 130mΩ Rds(on) and a maximum power dissipation of 600W. Designed for chassis mounting in a SOT-227 package, it boasts a 174ns fall time and 350ns turn-off delay. RoHS compliant and operating across a wide temperature range of -65°C to 150°C.
Stmicroelectronics STE45NK80ZD technical specifications.
| Package/Case | SOT-227 |
| Continuous Drain Current (ID) | 45A |
| Current Rating | 45A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 174ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 26nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount |
| Nominal Vgs | 3.75V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFREDmesh™ |
| Turn-Off Delay Time | 350ns |
| DC Rated Voltage | 800V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STE45NK80ZD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
