N-Channel MOSFET featuring 500V drain-source breakdown voltage and 48A continuous drain current. Offers a low 100mΩ drain-source on-resistance and 450W maximum power dissipation. Ideal for high-power applications with fast switching characteristics, including 40ns turn-on and 23ns fall times. Supports chassis, surface, and screw mounting with a 150°C maximum operating temperature.
Current Rating48A
MountingChassis Mount, Surface Mount, Screw
PolarityN-CHANNEL
Power450W
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Technical Specifications
Stmicroelectronics STE48NM50 technical specifications.
General
| Continuous Drain Current (ID) | 48A |
| Current Rating | 48A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 550V |
| Drain-source On Resistance-Max | 100mR |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 12.2mm |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 450W |
| Mount | Chassis Mount, Surface Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 450W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 550V |
| Width | 25.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STE48NM50 Datasheet
Download the complete datasheet for Stmicroelectronics STE48NM50 to view detailed technical specifications.
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