N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 8.4A continuous drain current, and 0.68 Ohm typical drain-source resistance. Features include a 30V gate-source voltage, 150°C max operating temperature, and 30W power dissipation. This through-hole component is housed in a TO-220-3 package, offering fast switching with turn-on delay of 14.5ns and fall time of 31ns. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF10N62K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
8.4A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
680mR
Drain to Source Voltage (Vdss)
620V
Fall Time
31ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
41ns
Turn-On Delay Time
14.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF10N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF10N62K3 to view detailed technical specifications.
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