N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 9A continuous drain current. Offers 480mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 25W. Exhibits a 20ns fall time and 50ns turn-off delay time. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF10NM65N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
650V
Dual Supply Voltage
650V
Fall Time
20ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
850pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
480mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Termination
Through Hole
Turn-Off Delay Time
50ns
Turn-On Delay Time
12ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF10NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STF10NM65N to view detailed technical specifications.
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