N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 9A continuous drain current. Offers 480mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 25W. Exhibits a 20ns fall time and 50ns turn-off delay time. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF10NM65N technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 850pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Termination | Through Hole |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF10NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STF10NM65N to view detailed technical specifications.
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