N-channel power MOSFET with 525V drain-source breakdown voltage and 10A continuous drain current. Features 510mΩ maximum drain-source on-resistance and 30W power dissipation. Operates across a -55°C to 150°C temperature range, with a 3.75V threshold voltage. Through-hole mounting in a TO-220-3 package. RoHS compliant with fast switching characteristics including 7ns turn-on delay and 42ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF11N52K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
510mR
Drain to Source Voltage (Vdss)
525V
Drain-source On Resistance-Max
510MR
Fall Time
42ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
510mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
281ns
Turn-On Delay Time
7ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF11N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF11N52K3 to view detailed technical specifications.
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