Stmicroelectronics
STF11N65K3
11A, 650V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF11N65K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
765mR
Drain to Source Voltage (Vdss)
650V
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.18nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
850mR
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
44ns
Turn-On Delay Time
14.5ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF11N65K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF11N65K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.