Stmicroelectronics
STF11N65K3
11A, 650V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF11N65K3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 765mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.18nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 14.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF11N65K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF11N65K3 to view detailed technical specifications.
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