N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 8.5A continuous drain current. Offers a low 470mΩ typical drain-source on-resistance. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with a 10ns fall time. Maximum power dissipation is rated at 25W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF11NM50N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
8.5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
470mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
470MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
547pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
470mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
33ns
Turn-On Delay Time
8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF11NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STF11NM50N to view detailed technical specifications.
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