N-channel power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers 450mΩ maximum drain-source on-resistance and 25W power dissipation. Designed for through-hole mounting in a TO-220-3 package, with a typical fall time of 12ns and turn-off delay of 50ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF11NM60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
450mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
50ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF11NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF11NM60N to view detailed technical specifications.
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