N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This component offers a low 0.37 Ohm typical drain-source resistance, with a maximum of 450mR. Designed for through-hole mounting in a TO-220FP package, it boasts fast switching characteristics with a 9ns fall time and 16ns turn-on delay. Maximum power dissipation is rated at 90W, with an operating temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STF11NM60ND technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 850pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 16ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF11NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STF11NM60ND to view detailed technical specifications.
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