N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 8.5A continuous drain current. This device offers a low 0.39 Ohm typical drain-source on-resistance and operates within a -55°C to 150°C temperature range. Packaged in a TO-220FP (TO-220-5) through-hole mount, it boasts a 25W power dissipation and fast switching characteristics with a 15.6ns turn-off delay.
PackageTO-220-5
MountingThrough Hole
PolarityN-CHANNEL
Power25W
Quick Jump:
Technical Specifications
Stmicroelectronics STF12N65M5 technical specifications.
General
| Package/Case | TO-220-5 |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 430mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 430mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 15.6ns |
| Turn-On Delay Time | 22.6ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF12N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF12N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
