
N-channel SuperMESH™2 Power MOSFET, 600V drain-source breakdown voltage, 10A continuous drain current, and 640mΩ Rds On. Features Zener protection, a TO-220FP package for through-hole mounting, and a maximum power dissipation of 35W. Operates across a wide temperature range from -55°C to 150°C, with a 30V gate-source voltage rating. RoHS compliant.
Stmicroelectronics STF12NK60Z technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 640mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 31.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.74nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Rds On Max | 640mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF12NK60Z to view detailed technical specifications.
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