N-channel power MOSFET featuring 500V drain-source breakdown voltage and 11A continuous drain current. Offers a maximum on-state resistance of 380mΩ at a nominal Vgs of 3V. This through-hole component, available in TO-220AB and TO-220FP packages, boasts a 25W power dissipation and a 14ns fall time. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF12NM50N technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 380mR |
| Dual Supply Voltage | 500V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| On-State Resistance | 380mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Termination | Through Hole |
| Turn-Off Delay Time | 60ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF12NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STF12NM50N to view detailed technical specifications.
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