N-channel power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers 410mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 3V. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component has a maximum power dissipation of 25W and operates between -55°C and 150°C. Key switching characteristics include a 10ns fall time and 60ns turn-off delay time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF12NM60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
410mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
410mR
Dual Supply Voltage
600V
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
960pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Nominal Vgs
3V
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
410mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Termination
Through Hole
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF12NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF12NM60N to view detailed technical specifications.
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