P-channel power MOSFET featuring 60V drain-source breakdown voltage and 8A continuous drain current. Offers 200mΩ maximum drain-source on-resistance and 225W maximum power dissipation. Designed for through-hole mounting in TO-220AB or TO-220FP packages, this RoHS compliant component operates from -55°C to 175°C. Key switching characteristics include 20ns turn-on delay and 10ns fall time.
Stmicroelectronics STF12PF06 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | -12A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF12PF06 to view detailed technical specifications.
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