P-channel power MOSFET featuring 60V drain-source breakdown voltage and 8A continuous drain current. Offers 200mΩ maximum drain-source on-resistance and 225W maximum power dissipation. Designed for through-hole mounting in TO-220AB or TO-220FP packages, this RoHS compliant component operates from -55°C to 175°C. Key switching characteristics include 20ns turn-on delay and 10ns fall time.
PackageTO-220-3
Current Rating-12A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STF12PF06 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
8A
Current Rating
-12A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
850pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
225W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
200mR
RoHS Compliant
Yes
Series
STripFET™ II
Turn-Off Delay Time
40ns
Turn-On Delay Time
20ns
DC Rated Voltage
-60V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF12PF06 Datasheet
Download the complete datasheet for Stmicroelectronics STF12PF06 to view detailed technical specifications.
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