N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 12A continuous drain current. Offers 370mΩ typical drain-source on-resistance (Rds(on)) in a TO-220FP package for through-hole mounting. Key electrical characteristics include 16ns turn-on delay, 42ns turn-off delay, and 870pF input capacitance. Maximum power dissipation is 35W with an operating temperature range of -55°C to 150°C. This RoHS compliant component is lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF13N80K5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
370mR
Drain to Source Voltage (Vdss)
800V
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
870pF
Lead Free
Lead Free
Length
10.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
450mR
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
42ns
Turn-On Delay Time
16ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF13N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF13N80K5 to view detailed technical specifications.
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