N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 12A continuous drain current. Offers 370mΩ typical drain-source on-resistance (Rds(on)) in a TO-220FP package for through-hole mounting. Key electrical characteristics include 16ns turn-on delay, 42ns turn-off delay, and 870pF input capacitance. Maximum power dissipation is 35W with an operating temperature range of -55°C to 150°C. This RoHS compliant component is lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF13N80K5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 370mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Length | 10.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 16ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF13N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF13N80K5 to view detailed technical specifications.
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