N-channel power MOSFET featuring 950V drain-source breakdown voltage and 10A continuous drain current. Offers 850mΩ maximum drain-source on-resistance and 40W maximum power dissipation. Designed for through-hole mounting in a TO-220FP package, this component exhibits a typical fall time of 21ns and turn-off delay of 50ns. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STF13N95K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
950V
Drain-source On Resistance-Max
850MR
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.62nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
850mR
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
50ns
Turn-On Delay Time
18ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF13N95K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF13N95K3 to view detailed technical specifications.
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