N-channel power MOSFET featuring 80V drain-source breakdown voltage and 64A continuous drain current. This through-hole component offers a low 3.5 mOhm typical drain-source on-resistance and operates within a -55°C to 175°C temperature range. Designed for efficient switching, it exhibits a 26ns turn-on delay and 44ns fall time. The MOSFET is housed in a TO-220-3 package and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF140N8F7 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.34nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.3mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 26ns |
| Weight | 0.01164oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF140N8F7 Datasheet
Download the complete datasheet for Stmicroelectronics STF140N8F7 to view detailed technical specifications.
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