
N-channel Power MOSFET featuring 250V drain-to-source breakdown voltage and 14A continuous drain current. This component offers a low 235mΩ Rds On resistance and is housed in a TO-220FP package for through-hole mounting. Key switching characteristics include a 9ns turn-on delay and 17ns fall time, with a maximum power dissipation of 25W. Operating temperature range spans from -55°C to 150°C.
Stmicroelectronics STF16NF25 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 235mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.4mm |
| Input Capacitance | 680pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 235mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 9ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF16NF25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
