N-channel Power MOSFET featuring 250V drain-to-source breakdown voltage and 14A continuous drain current. This component offers a low 235mΩ Rds On resistance and is housed in a TO-220FP package for through-hole mounting. Key switching characteristics include a 9ns turn-on delay and 17ns fall time, with a maximum power dissipation of 25W. Operating temperature range spans from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF16NF25 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
235mR
Drain to Source Voltage (Vdss)
250V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
16.4mm
Input Capacitance
680pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Nominal Vgs
3V
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
235mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Turn-Off Delay Time
35ns
Turn-On Delay Time
9ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF16NF25 Datasheet
Download the complete datasheet for Stmicroelectronics STF16NF25 to view detailed technical specifications.
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