N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 14A continuous drain current. This single-element transistor offers a low 420mOhm drain-source resistance at 10V gate-source voltage and a typical gate charge of 86nC. Encased in a TO-220FP package with 3 pins and a tab, it supports through-hole mounting. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STF16NK60Z technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
16.4(Max)
Seated Plane Height (mm)
20(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
2.04
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
14A
Maximum Drain Source Resistance
420@10VmOhm
Typical Gate Charge @ Vgs
86@10VnC
Typical Gate Charge @ 10V
86nC
Typical Input Capacitance @ Vds
2650@25VpF
Maximum Power Dissipation
40000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STF16NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STF16NK60Z to view detailed technical specifications.
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