N-channel Power MOSFET featuring 250V drain-source breakdown voltage and 17A continuous drain current. Offers 165mΩ maximum drain-source on-resistance at a nominal Vgs of 3V. Designed with a TO-220-3 through-hole package, this component boasts a 25W power dissipation and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8.8ns turn-on delay and 8.8ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF17NF25 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
165mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
165mR
Fall Time
8.8ns
Gate to Source Voltage (Vgs)
20V
Height
16.4mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Nominal Vgs
3V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
165mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
21ns
Turn-On Delay Time
8.8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF17NF25 Datasheet
Download the complete datasheet for Stmicroelectronics STF17NF25 to view detailed technical specifications.
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