N-channel power MOSFET featuring 550V drain-source breakdown voltage and 13A continuous drain current. Offers a low 240mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 25W. Includes fast switching characteristics with a 13ns fall time and 29ns turn-off delay. RoHS compliant and operates within a temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF18N55M5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
550V
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
550V
Drain-source On Resistance-Max
240MR
Fall Time
13ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.26nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
192mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
29ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF18N55M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF18N55M5 to view detailed technical specifications.
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