N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 255mΩ typical drain-to-source resistance, with a maximum of 280mΩ. Operating within a -55°C to 150°C temperature range, it boasts a 25W power dissipation and is housed in a TO-220-3 package. Key switching characteristics include a 10.6ns fall time, 47ns turn-off delay, and 12ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF18N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
255mR
Drain to Source Voltage (Vdss)
600V
Fall Time
10.6ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
791pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
280mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
47ns
Turn-On Delay Time
12ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF18N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF18N60M2 to view detailed technical specifications.
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