N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 255mΩ typical drain-to-source resistance, with a maximum of 280mΩ. Operating within a -55°C to 150°C temperature range, it boasts a 25W power dissipation and is housed in a TO-220-3 package. Key switching characteristics include a 10.6ns fall time, 47ns turn-off delay, and 12ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF18N60M2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 255mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 10.6ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 791pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 12ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF18N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF18N60M2 to view detailed technical specifications.
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