N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers a maximum drain-source on-resistance of 270mΩ at 10Vgs. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 40W. Includes fast switching characteristics with a typical fall time of 20ns and turn-on delay of 15ns. RoHS compliant and operates across a wide temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STF20NM65N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
270MR
Fall Time
20ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.28nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
75ns
Turn-On Delay Time
15ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF20NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STF20NM65N to view detailed technical specifications.
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