N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 17A continuous drain current. Offers a low 0.150 Ohm typical drain-to-source resistance, with a maximum of 190mR. Designed for through-hole mounting in a TO-220-3 package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 30W. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF21N65M5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
650V
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.95nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF21N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF21N65M5 to view detailed technical specifications.
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