N-channel power MOSFET featuring 500V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 190mΩ drain-source on-resistance and 30W maximum power dissipation. Operating across a wide temperature range from -55°C to 150°C, it includes a 30ns fall time and 90ns turn-off delay time. The MOSFET is housed in a TO-220-3 package and is RoHS compliant.
PackageTO-220-3
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STF21NM50N technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 190mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.95nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 90ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF21NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STF21NM50N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.