N-channel power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. Offers low on-resistance with a typical 168mOhm and maximum 190mOhm. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with turn-on delay of 14ns and fall time of 61ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 30W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF24N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Fall Time
61ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.06nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
190mR
RoHS Compliant
Yes
Series
Mdmesh II Plus™
Turn-Off Delay Time
60ns
Turn-On Delay Time
14ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF24N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF24N60M2 to view detailed technical specifications.
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